This paper covers measurement, analytical analysis, and Monte Carlo simulation of the frequency and bandwidth dependence of MOSFET low-frequency (LF) noise behavior. The model is based on microscopic device physics parameters, which cause statistical variation in the LF noise behavior of individual devices. Analytical equations for the statistical parameters are provided. The analytical model is compared to experimental data and Monte Carlo simulation results.
IEEE transactions on electron devices. New York, NY. vol. 54, no. 2 (Feb. 2007), p. 340-345