The epitaxial growth of evaporated cu/caf2 bilayers on si(111)
dc.contributor.author | Mattoso Filho, Ney Pereira | pt_BR |
dc.contributor.author | Mosca Junior, Dante Homero | pt_BR |
dc.contributor.author | Mazzaro, Irineu | pt_BR |
dc.contributor.author | Teixeira, Sergio Ribeiro | pt_BR |
dc.contributor.author | Schreiner, Wido Herwig | pt_BR |
dc.date.accessioned | 2014-05-20T02:04:53Z | pt_BR |
dc.date.issued | 1995 | pt_BR |
dc.identifier.issn | 0021-8979 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/95417 | pt_BR |
dc.description.abstract | Successful and unexpected epitaxial growth of Cu/CaF2, bilayers on hydrogen terminated Si(111) wafers by thermal evaporation is reported. The bilayers were characterized with conventional x-ray diffraction experiments, grazing angle incidence x-ray diffraction experiments, rocking curves, and x scans. The growth mode of Cu films on CaF2 epitaxially grown on Si(111) is completely different from that of the Cu film grown directly on Si(111). | en |
dc.format.mimetype | application/pdf | |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Journal of Applied Physics. Woodbury. Vol. 77, n. 6 (Mar. 1995), p. 2831-2833 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Física da matéria condensada | pt_BR |
dc.subject | Crescimento epitaxial | pt_BR |
dc.subject | Difração de raios X | pt_BR |
dc.subject | Filmes finos | pt_BR |
dc.title | The epitaxial growth of evaporated cu/caf2 bilayers on si(111) | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000262610 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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