Successful and unexpected epitaxial growth of Cu/CaF2, bilayers on hydrogen terminated Si(111) wafers by thermal evaporation is reported. The bilayers were characterized with conventional x-ray diffraction experiments, grazing angle incidence x-ray diffraction experiments, rocking curves, and x scans. The growth mode of Cu films on CaF2 epitaxially grown on Si(111) is completely different from that of the Cu film grown directly on Si(111).
Journal of Applied Physics. Woodbury. Vol. 77, n. 6 (Mar. 1995), p. 2831-2833