Mostrar el registro sencillo del ítem

dc.contributor.authorMattoso Filho, Ney Pereirapt_BR
dc.contributor.authorMosca Junior, Dante Homeropt_BR
dc.contributor.authorMazzaro, Irineupt_BR
dc.contributor.authorTeixeira, Sergio Ribeiropt_BR
dc.contributor.authorSchreiner, Wido Herwigpt_BR
dc.date.accessioned2014-05-20T02:04:53Zpt_BR
dc.date.issued1995pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/95417pt_BR
dc.description.abstractSuccessful and unexpected epitaxial growth of Cu/CaF2, bilayers on hydrogen terminated Si(111) wafers by thermal evaporation is reported. The bilayers were characterized with conventional x-ray diffraction experiments, grazing angle incidence x-ray diffraction experiments, rocking curves, and x scans. The growth mode of Cu films on CaF2 epitaxially grown on Si(111) is completely different from that of the Cu film grown directly on Si(111).en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofJournal of Applied Physics. Woodbury. Vol. 77, n. 6 (Mar. 1995), p. 2831-2833pt_BR
dc.rightsOpen Accessen
dc.subjectFísica da matéria condensadapt_BR
dc.subjectCrescimento epitaxialpt_BR
dc.subjectDifração de raios Xpt_BR
dc.subjectFilmes finospt_BR
dc.titleThe epitaxial growth of evaporated cu/caf2 bilayers on si(111)pt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000262610pt_BR
dc.type.originEstrangeiropt_BR


Ficheros en el ítem

Thumbnail
   

Este ítem está licenciado en la Creative Commons License

Mostrar el registro sencillo del ítem