The epitaxial growth of evaporated cu/caf2 bilayers on si(111)

dc.contributor.author	Mattoso Filho, Ney Pereira	pt_BR
dc.contributor.author	Mosca Junior, Dante Homero	pt_BR
dc.contributor.author	Mazzaro, Irineu	pt_BR
dc.contributor.author	Teixeira, Sergio Ribeiro	pt_BR
dc.contributor.author	Schreiner, Wido Herwig	pt_BR
dc.date.accessioned	2014-05-20T02:04:53Z	pt_BR
dc.date.issued	1995	pt_BR
dc.identifier.issn	0021-8979	pt_BR
dc.identifier.uri	http://hdl.handle.net/10183/95417	pt_BR
dc.description.abstract	Successful and unexpected epitaxial growth of Cu/CaF2, bilayers on hydrogen terminated Si(111) wafers by thermal evaporation is reported. The bilayers were characterized with conventional x-ray diffraction experiments, grazing angle incidence x-ray diffraction experiments, rocking curves, and x scans. The growth mode of Cu films on CaF2 epitaxially grown on Si(111) is completely different from that of the Cu film grown directly on Si(111).	en
dc.format.mimetype	application/pdf
dc.language.iso	eng	pt_BR
dc.relation.ispartof	Journal of Applied Physics. Woodbury. Vol. 77, n. 6 (Mar. 1995), p. 2831-2833	pt_BR
dc.rights	Open Access	en
dc.subject	Física da matéria condensada	pt_BR
dc.subject	Crescimento epitaxial	pt_BR
dc.subject	Difração de raios X	pt_BR
dc.subject	Filmes finos	pt_BR
dc.title	The epitaxial growth of evaporated cu/caf2 bilayers on si(111)	pt_BR
dc.type	Artigo de periódico	pt_BR
dc.identifier.nrb	000262610	pt_BR
dc.type.origin	Estrangeiro	pt_BR

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