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dc.contributor.authorOlivieri, Carlos Albertopt_BR
dc.contributor.authorBehar, Monipt_BR
dc.contributor.authorGrande, Pedro Luispt_BR
dc.contributor.authorFichtner, Paulo Fernando Papaleopt_BR
dc.contributor.authorZawislak, Fernando Claudiopt_BR
dc.contributor.authorBiersack, J.P.pt_BR
dc.contributor.authorFink, Dietmarpt_BR
dc.date.accessioned2014-05-13T02:03:40Zpt_BR
dc.date.issued1988pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/95117pt_BR
dc.description.abstract350-keV 209Bi + was implanted into an A1 (1000 Å)/V bilayer system. The Bi depth distribution measured by Rutherford backscattering agrees well with predictions obtained via the Monte-Carlo simulation method (TRIM code). Diffusion coefficients for Bi in both the V substrate of the AI/V system and the pure V foil are extracted after thermal annealings in a temperature range between 200 and 700 °c. The results show that the Ri ions follow a hindered diffusion at the Al film of the AI/V bilayer and for temperatures higher than 580 °C diffuse regularly in the V bulk.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofJournal of applied physics. Woodbury. Vol. 63, no. 9 (May 1988), p. 4431-4434pt_BR
dc.rightsOpen Accessen
dc.subjectImplantação de íonspt_BR
dc.titleThermal behavior and range distribution of 209bi implanted the into ai/v bilayer structurept_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000014851pt_BR
dc.type.originEstrangeiropt_BR


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