Thermal behavior and range distribution of 209bi implanted the into ai/v bilayer structure
dc.contributor.author | Olivieri, Carlos Alberto | pt_BR |
dc.contributor.author | Behar, Moni | pt_BR |
dc.contributor.author | Grande, Pedro Luis | pt_BR |
dc.contributor.author | Fichtner, Paulo Fernando Papaleo | pt_BR |
dc.contributor.author | Zawislak, Fernando Claudio | pt_BR |
dc.contributor.author | Biersack, J.P. | pt_BR |
dc.contributor.author | Fink, Dietmar | pt_BR |
dc.date.accessioned | 2014-05-13T02:03:40Z | pt_BR |
dc.date.issued | 1988 | pt_BR |
dc.identifier.issn | 0021-8979 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/95117 | pt_BR |
dc.description.abstract | 350-keV 209Bi + was implanted into an A1 (1000 Å)/V bilayer system. The Bi depth distribution measured by Rutherford backscattering agrees well with predictions obtained via the Monte-Carlo simulation method (TRIM code). Diffusion coefficients for Bi in both the V substrate of the AI/V system and the pure V foil are extracted after thermal annealings in a temperature range between 200 and 700 °c. The results show that the Ri ions follow a hindered diffusion at the Al film of the AI/V bilayer and for temperatures higher than 580 °C diffuse regularly in the V bulk. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Journal of applied physics. Woodbury. Vol. 63, no. 9 (May 1988), p. 4431-4434 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Implantação de íons | pt_BR |
dc.title | Thermal behavior and range distribution of 209bi implanted the into ai/v bilayer structure | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000014851 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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