Thermal behavior and range distribution of 209bi implanted the into ai/v bilayer structure

dc.contributor.author	Olivieri, Carlos Alberto	pt_BR
dc.contributor.author	Behar, Moni	pt_BR
dc.contributor.author	Grande, Pedro Luis	pt_BR
dc.contributor.author	Fichtner, Paulo Fernando Papaleo	pt_BR
dc.contributor.author	Zawislak, Fernando Claudio	pt_BR
dc.contributor.author	Biersack, J.P.	pt_BR
dc.contributor.author	Fink, Dietmar	pt_BR
dc.date.accessioned	2014-05-13T02:03:40Z	pt_BR
dc.date.issued	1988	pt_BR
dc.identifier.issn	0021-8979	pt_BR
dc.identifier.uri	http://hdl.handle.net/10183/95117	pt_BR
dc.description.abstract	350-keV 209Bi + was implanted into an A1 (1000 Å)/V bilayer system. The Bi depth distribution measured by Rutherford backscattering agrees well with predictions obtained via the Monte-Carlo simulation method (TRIM code). Diffusion coefficients for Bi in both the V substrate of the AI/V system and the pure V foil are extracted after thermal annealings in a temperature range between 200 and 700 °c. The results show that the Ri ions follow a hindered diffusion at the Al film of the AI/V bilayer and for temperatures higher than 580 °C diffuse regularly in the V bulk.	en
dc.format.mimetype	application/pdf	pt_BR
dc.language.iso	eng	pt_BR
dc.relation.ispartof	Journal of applied physics. Woodbury. Vol. 63, no. 9 (May 1988), p. 4431-4434	pt_BR
dc.rights	Open Access	en
dc.subject	Implantação de íons	pt_BR
dc.title	Thermal behavior and range distribution of 209bi implanted the into ai/v bilayer structure	pt_BR
dc.type	Artigo de periódico	pt_BR
dc.identifier.nrb	000014851	pt_BR
dc.type.origin	Estrangeiro	pt_BR

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