Modeling of statistical low-frequency noise of deep-submicrometer MOSFETs
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Data
2005Tipo
Assunto
Abstract
The low—frequency noise (LF-noise) of deep-submicrometer MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed consideration of statistical effects. The model is based on device physics parameters which cause statistical variations in LF-noise behavior of individual devices. Discrete quantities are used and analytical results for the statistical parameters are derived. Analytical equations f ...
The low—frequency noise (LF-noise) of deep-submicrometer MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed consideration of statistical effects. The model is based on device physics parameters which cause statistical variations in LF-noise behavior of individual devices. Discrete quantities are used and analytical results for the statistical parameters are derived. Analytical equations for average value and standard deviation of noise power are provided. The model is compatible with standard compact models used for circuit simulation. ...
Contido em
IEEE transactions on electron devices. New York, NY. Vol. 52, n. 7 (July 2005), p. 1576-1588
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Estrangeiro
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Artigos de Periódicos (39559)Ciências Exatas e da Terra (6036)
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