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Modeling of statistical low-frequency noise of deep-submicrometer MOSFETs

dc.contributor.authorWirth, Gilson Inaciopt_BR
dc.contributor.authorKoh, Jeongwookpt_BR
dc.contributor.authorSilva, Roberto dapt_BR
dc.contributor.authorThewes, Rolandpt_BR
dc.contributor.authorBrederlow, Ralfpt_BR
dc.date.accessioned2011-01-29T06:00:34Zpt_BR
dc.date.issued2005pt_BR
dc.identifier.issn0018-9383pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/27600pt_BR
dc.description.abstractThe low—frequency noise (LF-noise) of deep-submicrometer MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed consideration of statistical effects. The model is based on device physics parameters which cause statistical variations in LF-noise behavior of individual devices. Discrete quantities are used and analytical results for the statistical parameters are derived. Analytical equations for average value and standard deviation of noise power are provided. The model is compatible with standard compact models used for circuit simulation.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofIEEE transactions on electron devices. New York, NY. Vol. 52, n. 7 (July 2005), p. 1576-1588pt_BR
dc.rightsOpen Accessen
dc.subjectAnalog circuitsen
dc.subjectMicroeletrônicapt_BR
dc.subjectLow-frequency noise (LF-noise)en
dc.subjectMOS transistorsen
dc.subjectNoise modelingen
dc.subjectRF circuitsen
dc.subjectSemiconductor device noiseen
dc.titleModeling of statistical low-frequency noise of deep-submicrometer MOSFETspt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000556789pt_BR
dc.type.originEstrangeiropt_BR


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