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Monte Carlo simulation of hole transport in SiGe alloys

dc.contributor.authorSoares, Caroline dos Santospt_BR
dc.contributor.authorRossetto, Alan Carlos Juniorpt_BR
dc.contributor.authorVasileska, Dragicapt_BR
dc.contributor.authorWirth, Gilson Inaciopt_BR
dc.date.accessioned2023-07-01T03:38:52Zpt_BR
dc.date.issued2021pt_BR
dc.identifier.issn1807-1953pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/259719pt_BR
dc.description.abstractThis paper employs Ensemble Monte Carlo method to simulate transport of holes in SiGe alloys. A three-band model was employed to describe the valence band of these alloys. The nonparabolicity and the warping effect of the heavy-hole and light-hole bands were considered in their dispersion relation, while the split-off band was described as parabolic and spherical. We consider phonon and alloy disorder scattering in these calculations. The mobility of holes for a range of SiGe al-loys was calculated at 300K. The simulation mobility results agree with the experimental data, implying that the selected transport model for holes in SiGe alloys is adequate.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofJournal of integrated circuits and systems. Porto Alegre. Vol. 16, no. 1 (2021), p. 1-5pt_BR
dc.rightsOpen Accessen
dc.subjectMicroeletrônicapt_BR
dc.subjectEnsemble Monte Carloen
dc.subjectHole transporten
dc.subjectSimulação computacionalpt_BR
dc.subjectSiGe alloysen
dc.subjectPerturbações de cargapt_BR
dc.subjectAlloy disorder scatteringen
dc.subjectDispersion relationen
dc.titleMonte Carlo simulation of hole transport in SiGe alloyspt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb001167829pt_BR
dc.type.originNacionalpt_BR


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