Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire SOI MOSFETs with different dimensions

Abstract

This work presents an experimental andThis work presents an experimental and simulated analysis of the Negative-Bias-Temperature-Instability (NBTI) on omega-gate nanowire (NW) pMOSFETS transistors, focusing on the influence of channel length and width, since it is an important reliability parameter for advanced technology nodes. To better understand the obtained results of NBTI effect in NW, the 3D-numerical simulations were performed. The results shows a high NBTI in NW (ΔVT≈200-300mV – for WNW=10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation. simulated analysis of the Negative-Bias-Temperature-Instability (NBTI) on omega-gate nanowire (NW) pMOSFETS transistors, focusing on the influence of channel length and width, since it is an important reliability parameter for advanced technology nodes. To better understand the obtained results of NBTI effect in NW, the 3D-numerical simulations were performed. The results shows a high NBTI in NW (ΔVT≈200-300mV – for WNW=10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation.