Listar Ingeniería por autor "Hamdioui, Said"
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Evaluation of single event upset susceptibility of FinFET-based SRAMs with weak resistive defects
Copetti, Thiago Santos; Medeiros, Guilherme Cardoso; Taouil, Mottaqiallah; Hamdioui, Said; Poehls, Leticia Maria Bolzani; Balen, Tiago Roberto (2021) [Artículo de periódico]Fin Field-Efect Transistor (FinFET) technology enables the continuous downscaling of Integrated Circuits (ICs), using the Complementary Metal-Oxide Semiconductor (CMOS) technology in accordance with the More Moore domain. ...