Navegação Ciências Exatas e da Terra por Autor "Wirth, Gilson Inacio"
Resultados 1-8 de 8
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A design methodology using the inversion coefficient for low-voltage low-power CMOS voltage references
Colombo, Dalton Martini; Fayomi, Christian Jésus B.; Nabki, Frederic; Ferreira, Luiz Fernando; Wirth, Gilson Inacio; Bampi, Sergio (2011) [Artigo de periódico] -
Modeling of statistical low-frequency noise of deep-submicrometer MOSFETs
Wirth, Gilson Inacio; Koh, Jeongwook; Silva, Roberto da; Thewes, Roland; Brederlow, Ralf (2005) [Artigo de periódico]The low—frequency noise (LF-noise) of deep-submicrometer MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed ... -
Probabilistic approach for yield analysis of dynamic logic circuits
Brusamarello, Lucas; Silva, Roberto da; Wirth, Gilson Inacio; Reis, Ricardo Augusto da Luz (2008) [Artigo de periódico]In deep-submicrometer technologies, process variability challenges the design of high yield integrated circuits. While device critical dimensions and threshold voltage shrink, leakage currents drastically increase, threatening ... -
Single event transients in logic circuits - load and propagation induced pulse broadening
Wirth, Gilson Inacio; Kastensmidt, Fernanda Gusmão de Lima; Ribeiro, Ivandro da Silva (2008) [Artigo de periódico]The generation and propagation of single event transients (SET) in logic gate chains is studied and modeled. Regarding SET generation, we investigate the dependence of the generated SET pulse width on the struck node ... -
Statistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETs
Wirth, Gilson Inacio; Silva, Roberto da; Brederlow, Ralf (2007) [Artigo de periódico]This paper covers measurement, analytical analysis, and Monte Carlo simulation of the frequency and bandwidth dependence of MOSFET low-frequency (LF) noise behavior. The model is based on microscopic device physics parameters, ... -
Tbulk-BICS : a Built-in current sensor robust to process and temperature variations for soft error detection
Henes Neto, Egas; Kastensmidt, Fernanda Gusmão de Lima; Wirth, Gilson Inacio (2008) [Artigo de periódico]This paper presents a parameterized current sensor able to detect transient ionization in the silicon substrate. Each sensor is controlled by a set of trimming bits that can be used to attune the sensitivity of the sensor ... -
Técnicas probabilísticas para análise de yield em nível elétrico usando propagação de erros e derivadas numéricas
Brusamarello, Lucas; Silva, Roberto da; Wirth, Gilson Inacio; Reis, Ricardo Augusto da Luz (2007) [Artigo de periódico]Em tecnologias nanométricas, variações nos parâmetros CMOS são um desafio para o projeto de circuitos com yielda apropriado. Neste trabalho nós propomos uma metodologia eficiente e precisa para a modelagem estatística de ... -
Using bulk built-in current sensors to detect soft errors
Henes Neto, Egas; Ribeiro, Ivandro da Silva; Vieira, Michele Gusson; Wirth, Gilson Inacio; Kastensmidt, Fernanda Gusmão de Lima (2006) [Artigo de periódico]