Enhanced hydrogen bonding stregth observed in hydrogenated SiC and SiO2/SiC structures

Abstract

Thermally induced H incorporation, depth distribution, and loss in SiC and in thermally grown SiO2 films on SiC were investigated using isotopic substitution and nuclear reaction analyses. Hydrogen deuterium is found near the SiO2 film surface or close to the SiO2 /SiC interface depending on the oxidation/D2-annealing sequence, being much more strongly bound to SiC-based structures than to their Si counterparts. C compounds near the interface seem to play a significant role on the physicochemical and consequently on the electrical characteristics of the D passivated SiO2 /SiC interface.