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Enhanced hydrogen bonding stregth observed in hydrogenated SiC and SiO2/SiC structures

dc.contributor.authorSoares, Gabriel Vieirapt_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.contributor.authorRadtke, Claudiopt_BR
dc.contributor.authorStedile, Fernanda Chiarellopt_BR
dc.date.accessioned2016-05-20T02:10:22Zpt_BR
dc.date.issued2007pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141399pt_BR
dc.description.abstractThermally induced H incorporation, depth distribution, and loss in SiC and in thermally grown SiO2 films on SiC were investigated using isotopic substitution and nuclear reaction analyses. Hydrogen deuterium is found near the SiO2 film surface or close to the SiO2 /SiC interface depending on the oxidation/D2-annealing sequence, being much more strongly bound to SiC-based structures than to their Si counterparts. C compounds near the interface seem to play a significant role on the physicochemical and consequently on the electrical characteristics of the D passivated SiO2 /SiC interface.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. New York. Vol. 90, no. 8 (Feb. 2007), 081906, 3 p.pt_BR
dc.rightsOpen Accessen
dc.subjectCarbeto de silíciopt_BR
dc.subjectTracagem isotopicapt_BR
dc.subjectAnálise por reação nuclearpt_BR
dc.subjectFilmes finospt_BR
dc.subjectCompostos de silíciopt_BR
dc.titleEnhanced hydrogen bonding stregth observed in hydrogenated SiC and SiO2/SiC structurespt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000580186pt_BR
dc.type.originEstrangeiropt_BR


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