Formation of epitaxial [Beta]-Sn islands at the interface of SiO/sub 2/Si layers implanted with Sn ions

Abstract

180 nm SiO2 layers on Si s100d were implanted with Sn ions producing a profile with a peak concentration of 3 at. % at the middle of the oxide. After high temperature s900–1100 °Cd annealing, an array of b-Sn islands epitaxially attached to the Si was observed at the SiO2/Sis100d interface due to the migration of the implanted Sn atoms. The breakdown of the planar SiO2 /Si interface and the appearance of the island system is discussed in terms of the Sn–Si equilibrium properties. Our results reveal a new method to create a high density of nanosized islands with good uniformity in size and shape.