Formation of epitaxial [Beta]-Sn islands at the interface of SiO/sub 2/Si layers implanted with Sn ions
dc.contributor.author | Lopes, João Marcelo Jordão | pt_BR |
dc.contributor.author | Zawislak, Fernando Claudio | pt_BR |
dc.contributor.author | Fichtner, Paulo Fernando Papaleo | pt_BR |
dc.contributor.author | Papaleo, Ricardo Meurer | pt_BR |
dc.contributor.author | Lovey, Francisco Carlos | pt_BR |
dc.contributor.author | Condó, Adriana M. | pt_BR |
dc.contributor.author | Tolley, Alfredo J. | pt_BR |
dc.date.accessioned | 2016-05-19T02:09:22Z | pt_BR |
dc.date.issued | 2005 | pt_BR |
dc.identifier.issn | 0003-6951 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/141284 | pt_BR |
dc.description.abstract | 180 nm SiO2 layers on Si s100d were implanted with Sn ions producing a profile with a peak concentration of 3 at. % at the middle of the oxide. After high temperature s900–1100 °Cd annealing, an array of b-Sn islands epitaxially attached to the Si was observed at the SiO2/Sis100d interface due to the migration of the implanted Sn atoms. The breakdown of the planar SiO2 /Si interface and the appearance of the island system is discussed in terms of the Sn–Si equilibrium properties. Our results reveal a new method to create a high density of nanosized islands with good uniformity in size and shape. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Applied physics letters. New York. Vol. 86, no. 19 (May 2005), 191914, 3 p. | pt_BR |
dc.rights | Open Access | en |
dc.subject | Física da matéria condensada | pt_BR |
dc.subject | Interdifusao quimica | pt_BR |
dc.subject | Semicondutores elementares | pt_BR |
dc.subject | Implantacao ionica | pt_BR |
dc.subject | Silício | pt_BR |
dc.subject | Compostos de silício | pt_BR |
dc.subject | Estanho | pt_BR |
dc.title | Formation of epitaxial [Beta]-Sn islands at the interface of SiO/sub 2/Si layers implanted with Sn ions | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000530391 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
Files in this item
This item is licensed under a Creative Commons License
-
Journal Articles (39774)Exact and Earth Sciences (6068)