Integrity of hafnium silicate/silicon dioxide ultrathin films on Si

Abstract

Rapid thermal annealing at 1000 °C of (HfO2)12x(SiO2)x pseudobinary alloy films deposited on Si were performed in N2 or O2 atmospheres. The effects on the atomic transport, structure, and composition were investigated using isotopic substitution of oxygen, high-resolution transmission electron microscopy, nuclear reaction analyses, narrow nuclear reaction resonance profiling, and grazing angle x-ray reflection.