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dc.contributor.authorSilva, Antonio Ferreira dapt_BR
dc.contributor.authorLevine, Alexandrept_BR
dc.contributor.authorMomtaz, Zahra Sadrept_BR
dc.contributor.authorBoudinov, Henri Ivanovpt_BR
dc.contributor.authorSernelius, Bo E.pt_BR
dc.date.accessioned2015-12-25T02:39:46Zpt_BR
dc.date.issued2015pt_BR
dc.identifier.issn1098-0121pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/131409pt_BR
dc.description.abstractWe have performed longitudinal magnetoresistance measurements on heavily n-doped silicon for donor concentrations exceeding the critical value for the metal-nonmetal transition. The results are compared to those from a many-body theory where the donor electrons are assumed to reside at the bottom of the many-valley conduction band of the host. Good qualitative agreement between theory and experiment is obtained.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofPhysical review. B, Condensed matter and materials physics. Woodbury. Vol. 91, no. 21 (June 2015), 214414, 7 p.pt_BR
dc.rightsOpen Accessen
dc.subjectMagnetorresistênciapt_BR
dc.subjectSemicondutores elementarespt_BR
dc.subjectBandas de conduçãopt_BR
dc.subjectSiliciopt_BR
dc.subjectFerromagnetismopt_BR
dc.titleMagnetoresistance of doped siliconpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000980903pt_BR
dc.type.originEstrangeiropt_BR


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