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Magnetoresistance of doped silicon
dc.contributor.author | Silva, Antonio Ferreira da | pt_BR |
dc.contributor.author | Levine, Alexandre | pt_BR |
dc.contributor.author | Momtaz, Zahra Sadre | pt_BR |
dc.contributor.author | Boudinov, Henri Ivanov | pt_BR |
dc.contributor.author | Sernelius, Bo E. | pt_BR |
dc.date.accessioned | 2015-12-25T02:39:46Z | pt_BR |
dc.date.issued | 2015 | pt_BR |
dc.identifier.issn | 1098-0121 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/131409 | pt_BR |
dc.description.abstract | We have performed longitudinal magnetoresistance measurements on heavily n-doped silicon for donor concentrations exceeding the critical value for the metal-nonmetal transition. The results are compared to those from a many-body theory where the donor electrons are assumed to reside at the bottom of the many-valley conduction band of the host. Good qualitative agreement between theory and experiment is obtained. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Physical review. B, Condensed matter and materials physics. Woodbury. Vol. 91, no. 21 (June 2015), 214414, 7 p. | pt_BR |
dc.rights | Open Access | en |
dc.subject | Magnetorresistência | pt_BR |
dc.subject | Semicondutores elementares | pt_BR |
dc.subject | Bandas de condução | pt_BR |
dc.subject | Silício | pt_BR |
dc.subject | Ferromagnetismo | pt_BR |
dc.title | Magnetoresistance of doped silicon | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000980903 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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