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dc.contributor.authorOliviero, Erwan Marie Hubertpt_BR
dc.contributor.authorDavid, Marie-Laurept_BR
dc.contributor.authorFichtner, Paulo Fernando Papaleopt_BR
dc.contributor.authorBeaufort, Marie Francept_BR
dc.contributor.authorBarbot, Jean Françoispt_BR
dc.date.accessioned2015-06-19T02:00:30Zpt_BR
dc.date.issued2013pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/117970pt_BR
dc.description.abstractThe crystalline-to-amorphous transformation induced by lithium ion implantation at low temperature has been investigated. The resulting damage structure and its thermal evolution have been studied by a combination of Rutherford backscattering spectroscopy channelling (RBS/C) and cross sectional transmission electron microscopy (XTEM). Lithium low-fluence implantation at liquid nitrogen temperature is shown to produce a three layers structure: an amorphous layer surrounded by two highly damaged layers. A thermal treatment at 400 C leads to the formation of a sharp amorphous/crystalline interfacial transition and defect annihilation of the front heavily damaged layer. After 600 C annealing, complete recrystallization takes place and no extended defects are left. Anomalous recrystallization rate is observed with different motion velocities of the a/c interfaces and is ascribed to lithium acting as a surfactant. Moreover, the sharp buried amorphous layer is shown to be an efficient sink for interstitials impeding interstitial supersaturation and {311} defect formation in case of subsequent neon implantation. This study shows that lithium implantation at liquid nitrogen temperature can be suitable to form a sharp buried amorphous layer with a well-defined crystalline front layer, thus having potential applications for defects engineering in the improvement of post-implantation layers quality and for shallow junction formation.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofJournal of applied physics. Melville, NY. Vol. 113, no. 8 (Feb. 2013), p. 083515-1 a 083515-7pt_BR
dc.rightsOpen Accessen
dc.subjectLítiopt_BR
dc.subjectRecristalização (Metalurgia)pt_BR
dc.titleLithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineeringpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000968068pt_BR
dc.type.originEstrangeiropt_BR


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