Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering
dc.contributor.author | Oliviero, Erwan Marie Hubert | pt_BR |
dc.contributor.author | David, Marie-Laure | pt_BR |
dc.contributor.author | Fichtner, Paulo Fernando Papaleo | pt_BR |
dc.contributor.author | Beaufort, Marie France | pt_BR |
dc.contributor.author | Barbot, Jean François | pt_BR |
dc.date.accessioned | 2015-06-19T02:00:30Z | pt_BR |
dc.date.issued | 2013 | pt_BR |
dc.identifier.issn | 0021-8979 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/117970 | pt_BR |
dc.description.abstract | The crystalline-to-amorphous transformation induced by lithium ion implantation at low temperature has been investigated. The resulting damage structure and its thermal evolution have been studied by a combination of Rutherford backscattering spectroscopy channelling (RBS/C) and cross sectional transmission electron microscopy (XTEM). Lithium low-fluence implantation at liquid nitrogen temperature is shown to produce a three layers structure: an amorphous layer surrounded by two highly damaged layers. A thermal treatment at 400 C leads to the formation of a sharp amorphous/crystalline interfacial transition and defect annihilation of the front heavily damaged layer. After 600 C annealing, complete recrystallization takes place and no extended defects are left. Anomalous recrystallization rate is observed with different motion velocities of the a/c interfaces and is ascribed to lithium acting as a surfactant. Moreover, the sharp buried amorphous layer is shown to be an efficient sink for interstitials impeding interstitial supersaturation and {311} defect formation in case of subsequent neon implantation. This study shows that lithium implantation at liquid nitrogen temperature can be suitable to form a sharp buried amorphous layer with a well-defined crystalline front layer, thus having potential applications for defects engineering in the improvement of post-implantation layers quality and for shallow junction formation. | en |
dc.format.mimetype | application/pdf | |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Journal of applied physics. Melville, NY. Vol. 113, no. 8 (Feb. 2013), p. 083515-1 a 083515-7 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Lítio | pt_BR |
dc.subject | Recristalização (Metalurgia) | pt_BR |
dc.title | Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000968068 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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