Kinectics of ion-induced transformations in β-NiAl thin films as characterized by in situ electrical resistivity measurements
dc.contributor.author | Miranda, Rosalvo Mario Nunes | pt_BR |
dc.contributor.author | Vasconcellos, Marcos Antonio Zen | pt_BR |
dc.contributor.author | Baibich, Mario Norberto | pt_BR |
dc.contributor.author | Costa, Jose Antonio Trindade Borges da | pt_BR |
dc.date.accessioned | 2014-10-07T02:11:23Z | pt_BR |
dc.date.issued | 1998 | pt_BR |
dc.identifier.issn | 1098-0121 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/104219 | pt_BR |
dc.description.abstract | In situ electrical resistivity of thin film B-NiAl at 77 K under 120 keV Ar1 irradiation has been measured as a function of the total dose for film thickness of 25, 37.5, 50, 62.5, and 75 nm. A qualitative change was observed in the resistivity versus dose behavior for 50 nm films that cannot be explained by the standard kinetic models. It is shown that depth-dependent cross sections account for the phenomenon as well as for the variety of dose-dependent electrical behaviors reported in the literature. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Physical review. B, Condensed matter and materials physics. Woodbury. Vol. 58, no. 9 (Sept. 1998), p. 5250-5757 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Filmes finos | pt_BR |
dc.subject | Medidas de resistividade eletrica | pt_BR |
dc.title | Kinectics of ion-induced transformations in β-NiAl thin films as characterized by in situ electrical resistivity measurements | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000224227 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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