Kinectics of ion-induced transformations in β-NiAl thin films as characterized by in situ electrical resistivity measurements

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1998
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http://hdl.handle.net/10183/104219
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Abstract
In situ electrical resistivity of thin film B-NiAl at 77 K under 120 keV Ar1 irradiation has been measured as a function of the total dose for film thickness of 25, 37.5, 50, 62.5, and 75 nm. A qualitative change was observed in the resistivity versus dose behavior for 50 nm films that cannot be explained by the standard kinetic models. It is shown that depth-dependent cross sections account for the phenomenon as well as for the variety of dose-dependent electrical behaviors reported in the lit  ... 
In situ electrical resistivity of thin film B-NiAl at 77 K under 120 keV Ar1 irradiation has been measured as a function of the total dose for film thickness of 25, 37.5, 50, 62.5, and 75 nm. A qualitative change was observed in the resistivity versus dose behavior for 50 nm films that cannot be explained by the standard kinetic models. It is shown that depth-dependent cross sections account for the phenomenon as well as for the variety of dose-dependent electrical behaviors reported in the literature.  ... 
In
Physical review. B, Condensed matter and materials physics. Woodbury. Vol. 58, no. 9 (Sept. 1998), p. 5250-5757
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