Kinectics of ion-induced transformations in β-NiAl thin films as characterized by in situ electrical resistivity measurements

dc.contributor.author	Miranda, Rosalvo Mario Nunes	pt_BR
dc.contributor.author	Vasconcellos, Marcos Antonio Zen	pt_BR
dc.contributor.author	Baibich, Mario Norberto	pt_BR
dc.contributor.author	Costa, Jose Antonio Trindade Borges da	pt_BR
dc.date.accessioned	2014-10-07T02:11:23Z	pt_BR
dc.date.issued	1998	pt_BR
dc.identifier.issn	1098-0121	pt_BR
dc.identifier.uri	http://hdl.handle.net/10183/104219	pt_BR
dc.description.abstract	In situ electrical resistivity of thin film B-NiAl at 77 K under 120 keV Ar1 irradiation has been measured as a function of the total dose for film thickness of 25, 37.5, 50, 62.5, and 75 nm. A qualitative change was observed in the resistivity versus dose behavior for 50 nm films that cannot be explained by the standard kinetic models. It is shown that depth-dependent cross sections account for the phenomenon as well as for the variety of dose-dependent electrical behaviors reported in the literature.	en
dc.format.mimetype	application/pdf	pt_BR
dc.language.iso	eng	pt_BR
dc.relation.ispartof	Physical review. B, Condensed matter and materials physics. Woodbury. Vol. 58, no. 9 (Sept. 1998), p. 5250-5757	pt_BR
dc.rights	Open Access	en
dc.subject	Filmes finos	pt_BR
dc.subject	Medidas de resistividade eletrica	pt_BR
dc.title	Kinectics of ion-induced transformations in β-NiAl thin films as characterized by in situ electrical resistivity measurements	pt_BR
dc.type	Artigo de periódico	pt_BR
dc.identifier.nrb	000224227	pt_BR
dc.type.origin	Estrangeiro	pt_BR

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