Show simple item record

dc.contributor.authorBoudinov, Henri Ivanovpt_BR
dc.contributor.authorSouza, Joel Pereira dept_BR
dc.contributor.authorSaul, Cyro Ketzerpt_BR
dc.date.accessioned2014-05-20T02:04:56Zpt_BR
dc.date.issued1999pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/95423pt_BR
dc.description.abstractElectrical activation of In of 18%–52% of the implanted dose (531014 cm-²) was obtained in Si samples having a C+ coimplantation after rapid thermal annealing (RTA) at 800–1000 °C for 15 s. This electrical activation yield markedly contrasts with that in samples singly implanted with In in which only ~=0.5% of the dose was activated. The following features were observed in the coimplanted samples: (i) a reverse annealing of the electrical activation in the temperature range of 800–900 °C; (ii) significant reduction of the In profile redistribution during RTA; and (iii) the electrically activated In concentration is substantially higher than the substitutional In concentration. These findings are discussed in terms of the interaction between C atoms and Si self-interstitials (SiI), strain compensation between C and In atoms in the Si lattice, and formation of stable In substitutional–C substitutional acceptors centers.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofJournal of Applied Physics. Melville. Vol. 86, no. 10 (Nov. 1999), p. 5909-5911pt_BR
dc.rightsOpen Accessen
dc.subjectCarbonopt_BR
dc.subjectImplantacao de ionspt_BR
dc.subjectSiliciopt_BR
dc.subjectSemicondutorespt_BR
dc.subjectImpurezaspt_BR
dc.subjectÍndio : elemento químicopt_BR
dc.titleEnhanced electrical activation of indium coimplanted with carbon in a silicon substratept_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000269315pt_BR
dc.type.originEstrangeiropt_BR


Files in this item

Thumbnail
   

This item is licensed under a Creative Commons License

Show simple item record