Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate
dc.contributor.author | Boudinov, Henri Ivanov | pt_BR |
dc.contributor.author | Souza, Joel Pereira de | pt_BR |
dc.contributor.author | Saul, Cyro Ketzer | pt_BR |
dc.date.accessioned | 2014-05-20T02:04:56Z | pt_BR |
dc.date.issued | 1999 | pt_BR |
dc.identifier.issn | 0021-8979 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/95423 | pt_BR |
dc.description.abstract | Electrical activation of In of 18%–52% of the implanted dose (531014 cm-²) was obtained in Si samples having a C+ coimplantation after rapid thermal annealing (RTA) at 800–1000 °C for 15 s. This electrical activation yield markedly contrasts with that in samples singly implanted with In in which only ~=0.5% of the dose was activated. The following features were observed in the coimplanted samples: (i) a reverse annealing of the electrical activation in the temperature range of 800–900 °C; (ii) significant reduction of the In profile redistribution during RTA; and (iii) the electrically activated In concentration is substantially higher than the substitutional In concentration. These findings are discussed in terms of the interaction between C atoms and Si self-interstitials (SiI), strain compensation between C and In atoms in the Si lattice, and formation of stable In substitutional–C substitutional acceptors centers. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Journal of Applied Physics. Melville. Vol. 86, no. 10 (Nov. 1999), p. 5909-5911 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Carbono | pt_BR |
dc.subject | Implantação de íons | pt_BR |
dc.subject | Silício | pt_BR |
dc.subject | Semicondutores | pt_BR |
dc.subject | Impurezas | pt_BR |
dc.subject | Índio : elemento químico | pt_BR |
dc.title | Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000269315 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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