We investigate the electrical properties of Bi-doped Si samples, prepared by ion implantation, in a range of concentrations around and above the metal–nonmetal transition. Comparison between experimental and theoretical values of the resistivity brought out that in these samples a similar behavior is observed as for other n-doped Si, thus confirming the results obtained in the same range of impurity concentration, i.e., p(Sb)<P(p)<p(As)<p(Bi).
Journal of Applied Physics. Woodbury. Vol. 79, n. 7 (Apr. 1996), p. 3453-3455