Epitaxial fe/cu superlattices on Si(111)

Thumbnail
Visualizar/abrir
Data
1992
Autor
Tipo
URI
http://hdl.handle.net/10183/95346
Assunto
Abstract
We report on the successful epitaxial growth of Fe/Cu superlattices on Si( 111) wafers at room temperature. The superlattices were characterized with x-ray diffraction, conversion electron Mossbauer spectrometry, and selected area electron diffraction experiments. The epitaxial growth is crucially dependent on which element is deposited first on the bare Si( 111).
Contido em
Journal of Applied Physics. Woodbury. Vol. 72, n. 12 (Dec. 1992), p. 5682-5686
Origem
Estrangeiro
Coleções
 
   

Este item está licenciado na Creative Commons License