We report on the successful epitaxial growth of Fe/Cu superlattices on Si( 111) wafers at room temperature. The superlattices were characterized with x-ray diffraction, conversion electron Mossbauer spectrometry, and selected area electron diffraction experiments. The epitaxial growth is crucially dependent on which element is deposited first on the bare Si( 111).
Journal of Applied Physics. Woodbury. Vol. 72, n. 12 (Dec. 1992), p. 5682-5686