The composition and bonding configuration of amorphous germanium-tin (a-Gel 1--xSnx ) thin films are reported (O≤x < 0.3). Mössbauer spectroscopy analyses show that under the reported deposition conditions all tin atoms enter the a-Ge network in a perfect substitutional way, i.e., in a covalent tetrahedral configuration. The absence of defect structures in the tin sites is discussed and compared with results on films prepared under different conditions.
Journal of Applied Physics. Woodbury. Vol. 63, no. 11 (June, 1988), p. 5596-5598