Listar Microelectrónica por tema "Memória estática de acesso aleatório"
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Reliability evaluation of finFET-based SRAMs in the presence of resistive defects
(2021) [Tesis]The development of Fin Field Effect Transistor (FinFET) has made possible the continuous scaling-down of Complementary Metal-Oxide-Semiconductor (CMOS) technology, overcoming issues caused by the Short-Channel Effects. In ...