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dc.contributor.authorHenes Neto, Egaspt_BR
dc.contributor.authorKastensmidt, Fernanda Gusmão de Limapt_BR
dc.contributor.authorWirth, Gilson Inaciopt_BR
dc.date.accessioned2011-01-29T06:00:41Zpt_BR
dc.date.issued2008pt_BR
dc.identifier.issn0018-9499pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/27615pt_BR
dc.description.abstractThis paper presents a parameterized current sensor able to detect transient ionization in the silicon substrate. Each sensor is controlled by a set of trimming bits that can be used to attune the sensitivity of the sensor compensating process and temperature variations. By choosing different configurations in the trimming bits, it is possible to adjust the performance of the sensor, which can increase the number of transistors monitored by a single sensor reducing the area overhead. Monte Carlo simulations are used to evaluate the sensor behavior. Results from a case-study circuit with embedded Tbulk-BICS confirm the efficiency of the technique.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofIEEE transactions on nuclear science. New York. vol. 55, no. 4, part 1 (Aug. 2008), p. 2281-2288pt_BR
dc.rightsOpen Accessen
dc.subjectBuilt-in current sensoren
dc.subjectMicroeletrônicapt_BR
dc.subjectFault toleranceen
dc.subjectProcess variationsen
dc.subjectSoft errorsen
dc.titleTbulk-BICS : a Built-in current sensor robust to process and temperature variations for soft error detectionpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000684869pt_BR
dc.type.originEstrangeiropt_BR


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