Navegação Ciências Exatas e da Terra por Assunto "Implantacao ionica"
Resultados 1-20 de 25
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Amorphization/recrystallization of buried amorphous silicon layer induced by oxygen ion implantation
(2004) [Artigo de periódico]In this paper we discuss the structural modifications observed in a buried amorphous Si (α-Si) layer containing high oxygen concentration level (up to ~ 3 at.%) after being implanted at elevated temperature with 16O+ ions. ... -
Carbon deposition in Si as a consequence of H and He irradiations : a systematic study
(2002) [Artigo de periódico]In the present work we have investigated the influence of different parameters that determine the C deposition on a Si target. Among them we have studied the pressure of the irradiation chamber, the implantation fluence, ... -
Characterization of deep level traps responsible for isolation of proton implanted GaAs
(2003) [Artigo de periódico]Deep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability ... -
Competing influence of damage buildup and lattice vibrations on ion range profiles in Si
(2003) [Artigo de periódico]Phosphorus depth profiles in Si obtained by 140 keV implantation in the [001] axial channel direction and in a direction 7° off axis are investigated at two different doses (531013 and 5 31015 cm22) for implantation ... -
Cu gettering in ion implanted and annealed silicon in regions before and beyond the mean projected ion range
(2003) [Artigo de periódico]The strong gettering of Cu atoms in single-crystal Si implanted with 3.5 MeV P+ ions is studied after thermal treatment and Cu contamination. Cu decorates the remaining implantation damage. Three separate Cu gettering ... -
Electrical activation of carbon in GaAs : implantation temperature effects
(2001) [Artigo de periódico]Carbon was implanted into GaAs at the energy of 1 MeV with doses between 131013 and 2 31015 cm22 at temperatures of 80 K, nominal room temperature (RT), and 300 °C. A markedly higher electrical activation was obtained in ... -
Electrical resistivity of acceptor carbon in GaAs
(2004) [Artigo de periódico]The electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acceptor carbon in GaAs prepared by ion implantation with impurity concentrations between 1017 and 1019 cm-³. Good agreement ... -
Electroluminescence induced by Ge nanocrystals obtained by hot ion implantation into SiO2
(2009) [Artigo de periódico]Commonly, electroluminescence (EL) from Ge nanocrystals (Ge NCs) has been obtained by room temperature (RT) Ge implantation into a SiO2 matrix followed by a high temperature anneal. In the present work, we have used a novel ... -
Electron irradiation effects on the nucleation and growth of Au nanoparticles in silicon nitride membranes
(2017) [Artigo de periódico]The formation of Au nanoparticles (NPs) in Auþ ion-implanted silicon nitride thin films and membranes was investigated as a function of post-implantation thermal treatments or room temperature electron irradiation at ... -
Ferromagnetic nanoclusters formed by Mn implantation in GaAs
(2005) [Artigo de periódico]Ferromagnetic clusters were incorporated into GaAs samples by Mn implantation and subsequent annealing. The composition and structural properties of the Mn-based nanoclusters formed at the surface and buried into the GaAs ... -
Formation of epitaxial [Beta]-Sn islands at the interface of SiO/sub 2/Si layers implanted with Sn ions
(2005) [Artigo de periódico]180 nm SiO2 layers on Si s100d were implanted with Sn ions producing a profile with a peak concentration of 3 at. % at the middle of the oxide. After high temperature s900–1100 °Cd annealing, an array of b-Sn islands ... -
Formation of Ge nanoparticles in SiOxNy by ion implantation and thermal annealing
(2015) [Artigo de periódico]Germanium nanoparticles embedded within dielectric matrices hold much promise for applications in optoelectronic and electronic devices. Here we investigate the formation of Ge nanoparticles in amorphous SiO1.67N0.14 as a ... -
Gemini-Phoenix infrared high-resolution abundance analysis of five giants in the bulge globular cluster NGC 6553
(2003) [Artigo de periódico]A detailed abundance analysis of 5 giants of the metal-rich bulge globular cluster NGC 6553 was carried out using high resolution infrared spectra in the H band, obtained at the Gemini-South 8m telescope. JK photometry ... -
A high-energy electron scattering study of the electronic structure and elemental composition of O-implanted Ta films used for the fabrication of memristor devices
(2013) [Artigo de periódico]High-energy electron scattering is used to investigate Ta films implanted with 10 keV O ions. These films are of interest as they have been used for the fabrication of memristors. High-energy electron scattering is used ... -
Indications of nuclear-track-guided electrons induced by fast heavy ions in insulators
(1997) [Artigo de periódico]We present experimental evidence for a deceleration of convoy electrons produced by 5 MeV/u ions (N⁷⁺, Ne¹⁰⁺, S¹³⁺, Ni²³⁺, and Ag³⁷⁺) during the interaction with insulator foils at normal incidence. The deceleration first ... -
In situ electrical resistivity of thin-film beta-nial under ar irradiation at 77 k
(1992) [Artigo de periódico]We report on the dose dependence of the in sítu electrical resistivity of a thin-film NiAl alloy under 120-keV-Ar-ion irradiation at 77 K. The results show two different behaviors. First, the values of resistivity increase, ... -
Interdependence between training and magnetization reversal in granular Co-CoO exchange bias systems
(2014) [Artigo de periódico]The interdependence between training and magnetization reversal in granular Co-CoO exchange bias (EB) systems prepared byOion implantation inCo thin films is demonstrated by polarized neutron reflectometry. While high-fluence ... -
Ion beam synthesis of cubic-SiC layer on Si(111) substrate
(2006) [Artigo de periódico]We have investigated SiC layers produced by ion beam synthesis on Si (111) substrates using different procedures. Bare Si (111) and SiO2/Si (111) structures were implanted with carbon at 40 keV up to a fluence of 4 1017 ... -
Ion implantation in β-Ga2O3 : Physics and technology
(2021) [Artigo de periódico]Gallium oxide, and in particular its thermodynamically stable β-Ga2O3 phase, is within the most exciting materials in research and technology nowadays due to its unique properties. The very high breakdown electric field ... -
Magnetism, magnetoresistance, and Shubnikov-de Haas oscillations in Na-implanted highly oriented pyrolitic graphite
(2012) [Artigo de periódico]We report on magnetization, magnetoresistance, and Shubnikov-de Haas oscillations experiments in Na-implanted samples of highly oriented pyrolitic graphite (HOPG). Different ion fluences were applied so that samples with ...
