Navegação Ciências Exatas e da Terra por Assunto "Dopagem de semicondutores"
Resultados 1-17 de 17
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Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures
(2000) [Artigo de periódico]The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 ... -
Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon
(2000) [Artigo de periódico]He1 ions were implanted at 40 keV into Si <100> channel direction at room temperature (RT) and at 350 °C. The Si samples were subsequently doped with Cu in order to study the gettering of Cu atoms at the defective layer. ... -
Dopants redistribution during titanium-disilicide formation by rapid thermal processing
(1987) [Artigo de periódico]Redistribution of implanted As (5 X 10 15 cm-², 150 keV) and Sb ( 1 X 10 15 cm-², 200 keV) due to TiSi2 formation by rapid thermal processing was investigated by means of backscattering spectroscopy. By choosing properly ... -
Electrical activation of boron coimplanted with carbon in a silicon substrate
(1993) [Artigo de periódico]It is demonstratedt hat the electrical activation in B+ (5.0X 1014 cm-² at 50 keV) implanted Si samples submitted to furnace annealing can be noticeably affected by a C+ coimplantation. It was found that a C+ dose ten times ... -
Electrical isolation in GaAs by light ion irradiation : the role of antisite defects
(1996) [Artigo de periódico]The evolution of the sheet resistance (Rs) in n-type GaAs layers during ion irradiation was studied using light mass projectiles like proton, deuterium, and helium ions at various energies. For all the cases, at the beginning ... -
Electrical isolation of a silicon [Delta]-doped layer in GaAs by ion irradiation
(1999) [Artigo de periódico]The electrical isolation of a n-type d -doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation Dth of the d -doped layer was found to be '2 times higher ... -
Electrical isolation of n-type GaAs layers by proton bombardment : effects of the irration temperature
(1998) [Artigo de periódico]The electrical isolation in n-type GaAs layers produced by proton irradiation at temperatures from 2100 to 300°C was investigated. The threshold dose for the isolation (Dth) was found almost identical for irradiation at ... -
Electrical resistivity of acceptor carbon in GaAs
(2004) [Artigo de periódico]The electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acceptor carbon in GaAs prepared by ion implantation with impurity concentrations between 1017 and 1019 cm-³. Good agreement ... -
Electrical resistivity of bismuth implanted into silicon
(1996) [Artigo de periódico]We investigate the electrical properties of Bi-doped Si samples, prepared by ion implantation, in a range of concentrations around and above the metal–nonmetal transition. Comparison between experimental and theoretical ... -
GeO2/Ge structure submitted to annealing in deuterium : incorporation pathways and associated oxide modifications
(2014) [Artigo de periódico]Deuterium (D) incorporation in GeO2/Ge structures following D2 annealing was investigated. Higher D concentrations were obtained for GeO2/Ge samples in comparison to their SiO2/Si counterparts annealed in the same conditions. ... -
Impurity resistivity of the double-donor system Si:P,Bi
(1999) [Artigo de periódico]The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities ... -
Magnetism in dilute magnetic oxide thin films based on SnO/sub 2/
(2006) [Artigo de periódico]Thin films of SnO2 prepared by pulsed-laser deposition on R-cut sapphire substrates exhibit ferromagnetic properties at room temperature when they are doped with Cr, Mn, Fe, Co, or Ni, but not with other 3d cations. ... -
Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures : evidence of ion beam induced annealing
(2001) [Artigo de periódico]The accumulation of damage and the development of mechanical strain in crystalline Si (c-Si) by O and N ion implantation to doses up to 431017 cm-² at elevated temperatures have been studied using Rutherford backscattering ... -
Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
(1993) [Artigo de periódico]A pronounced enhancement in the electrical activation of implanted Si in GaAs is demonstrated by co-implantation of Al. The maximum enhancement ( x 2) occurs when the Si distribution is shallow, there is a separation between ... -
Metastable acceptor centers in boron implanted silicon
(1995) [Artigo de periódico]The evolution of the electrical activation with the annealing time in B1 implanted (5.0 31014 cm22, 50 keV! Si was studied as a function of the annealing temperature. Electrical activation yields of 15%–30% were observed ... -
Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures
(2000) [Artigo de periódico]The development of mechanical strain and accumulation of damage in silicon single crystals implanted with Ne ions to doses in the range of 0.1–1.0 x1017 cm-² at temperatures from 200 to 600 °C were investigated employing ... -
Test of a simple model of the intermolecular pontetial of C60 on the series of KnC60, 0 < N >=6, crystals
(1995) [Artigo de periódico]We perform a further test of a simple atom–atom model of the intermolecular potential of C60 by applying it to the alkali‐metal doped crystals KnC60, 0<n≤6. The model consists in an icosahedron of 12 Lennard‐Jones interaction ...
