Navegação Ciências Exatas e da Terra por Autor "Visokay, Mark R."
Resultados 1-3 de 3
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Environment of hafnium and silicon in Hf-based dielectric films : an atomistic study by x-ray absorption spectroscopy and x-ray diffraction
Morais, Jonder; Miotti, Leonardo; Bastos, Karen Paz; Teixeira, Sergio Ribeiro; Baumvol, Israel Jacob Rabin; Rotondaro, Antonio L.P.; Chambers, James Joseph; Visokay, Mark R.; Colombo, Luigi; Alves, Maria do Carmo Martins (2005) [Artigo de periódico]The atomic structure of HfSiO and HfSiON was investigated before and after thermal annealing using x-ray diffraction and x-ray absorption spectroscopy. In HfSiO, the Hf atoms are arranged in a monoclinic HfO2 structure ... -
Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling
Miotti, Leonardo; Bastos, Karen Paz; Soares, Gabriel Vieira; Driemeier, Carlos Eduardo; Pezzi, Rafael Peretti; Morais, Jonder; Baumvol, Israel Jacob Rabin; Rotondaro, Antonio L.P.; Visokay, Mark R.; Chambers, James Joseph; Quevedo-Lopez, M.; Colombo, Luigi (2004) [Artigo de periódico]HfSiON films deposited on Si (001) by reactive sputtering were submitted to rapid thermal annealing at 1000 °C in vacuum, N2 and O2 atmospheres. The stability of the dielectric was evaluated by measuring the atomic transport ... -
Integrity of hafnium silicate/silicon dioxide ultrathin films on Si
Morais, Jonder; Miotti, Leonardo; Soares, Gabriel Vieira; Teixeira, Sergio Ribeiro; Pezzi, Rafael Peretti; Bastos, Karen Paz; Baumvol, Israel Jacob Rabin; Rotondaro, Antonio L.P.; Chambers, Jim J.; Visokay, Mark R.; Colombo, Luigi (2002) [Artigo de periódico]Rapid thermal annealing at 1000 °C of (HfO2)12x(SiO2)x pseudobinary alloy films deposited on Si were performed in N2 or O2 atmospheres. The effects on the atomic transport, structure, and composition were investigated using ...