• Analytical energy loss distribution for accurate high resolution depth profiling using medium energy ion scattering 

      Pezzi, Rafael Peretti; Krug, Cristiano; Grande, Pedro Luis; Rosa, Elisa Brod Oliveira da; Schiwietz, Gregor; Baumvol, Israel Jacob Rabin (2008) [Artigo de periódico]
      An analytical approach to ion energy loss distributions capable of simplifying medium energy ion scattering MEIS spectral analysis is presented. This analytical approach preserves the accuracy of recent numerical models ...
    • Atomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Si 

      Krug, Cristiano; Rosa, Elisa Brod Oliveira da; Almeida, Rita Maria Cunha de; Morais, Jonder; Baumvol, Israel Jacob Rabin; Salgado, Tania Denise Miskinis; Stedile, Fernanda Chiarello (2000) [Artigo de periódico]
      Ultrathin films of Al₂O₃ deposited on Si were submitted to rapid thermal annealing in vacuum or in oxygen atmosphere, in the temperature range from 600 to 800 °C. Nuclear reaction profiling with subnanometric depth resolution ...
    • Comment on "Atomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Si" : reply 

      Krug, Cristiano; Rosa, Elisa Brod Oliveira da; Almeida, Rita Maria Cunha de; Morais, Jonder; Baumvol, Israel Jacob Rabin; Salgado, Tania Denise Miskinis; Stedile, Fernanda Chiarello (2001) [Artigo de periódico]
    • Composition, atomic transport, and chemical stability of ZrAl/sub x/O/sub y/ ultrathin films deposited on Si(001) 

      Morais, Jonder; Rosa, Elisa Brod Oliveira da; Pezzi, Rafael Peretti; Miotti, Leonardo; Baumvol, Israel Jacob Rabin (2001) [Artigo de periódico]
      The stability of a ZrAlxOy film sputtered on Si upon thermal annealing in vacuum or in O2 was investigated. X-ray diffraction indicated that the as-deposited film was amorphous and remained so after annealing. Rutherford ...
    • Diffusion reaction of oxigen in aluminum oxide films on silicon 

      Rosa, Elisa Brod Oliveira da; Baumvol, Israel Jacob Rabin; Morais, Jonder; Almeida, Rita Maria Cunha de; Papaleo, Ricardo Meurer; Stedile, Fernanda Chiarello (2002) [Artigo de periódico]
      Aluminum oxide films deposited on silicon by atomic layer chemical vapor deposition were annealed in an ¹⁸O-enriched oxygen atmosphere under various conditions of temperature, time, and pressure. Cavity formation at the ...
    • Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon 

      Frank, Martin M.; Chabal, Yves Jean; Green, Martin L.; Delabie, Annelies; Brijs, Bert; Wilk, Glen D.; Ho, Mun-Yee; Rosa, Elisa Brod Oliveira da; Baumvol, Israel Jacob Rabin; Stedile, Fernanda Chiarello (2003) [Artigo de periódico]
      A route is presented for activation of hydrogen-terminated Si(100) prior to atomic layer deposition. It is based on our discovery from in situ infrared spectroscopy that organometallic precursors can effectively initiate ...
    • Interaction of SiC thermal oxidation by-products with SiO2 

      Radtke, Claudio; Stedile, Fernanda Chiarello; Soares, Gabriel Vieira; Krug, Cristiano; Rosa, Elisa Brod Oliveira da; Driemeier, Carlos Eduardo; Baumvol, Israel Jacob Rabin; Pezzi, Rafael Peretti (2008) [Artigo de periódico]
      We investigated oxygen incorporation and exchange during thermal growth of silicon oxide films on silicon carbide. This investigation was carried out in parallel with the thermal growth of silicon oxide films on silicon ...
    • Stability of zirconium silicate films on Si under vacuum and O/sub 2/ annealing 

      Morais, Jonder; Rosa, Elisa Brod Oliveira da; Miotti, Leonardo; Pezzi, Rafael Peretti; Baumvol, Israel Jacob Rabin; Rotondaro, Antonio L.P.; Bevan, M.J.; Colombo, Luigi (2001) [Artigo de periódico]
      The effect of postdeposition annealing in vacuum and in dry O2 on the atomic transport and chemical stability of chemical vapor deposited ZrSixOy films on Si is investigated. Rutherford backscattering spectrometry, narrow ...