• Ion beam synthesis of cubic FeSi2 

      Desimoni, Judith; Bernas, H.; Behar, Moni; Lin, X.W.; Washburn, J.; Liliental-Weber, Zuzanna (1993) [Artigo de periódico]
      Cubic FeSi, precipitates were synthesized in Si ( 100) by room-temperature Fe ion implantation followed by Si 500 keV ion beam induced epitaxial crystallization at 320 “C!. High resolution electron microscopy and Rutherford ...
    • Low-temperature ion-induced epitaxial growth of alfa-FeSi2 and cubic FeSi2 in Si 

      Lin, X.W.; Behar, Moni; Desimoni, Judith; Bernas, H.; Washburn, J.; Liliental-Weber, Zuzanna (1993) [Artigo de periódico]
      Ion-beam-induced epitaxial crystallization of amorphous Si implanted with Fe to 18 at. % peak concentration was studied. The structure of the specimen was characterized using transmission electron microscopy and Rutherford ...
    • Sequential phase formation by ion-induced epitaxy in fe-implanted si(001) 

      Behar, Moni; Bernas, H.; Desimoni, Judith; Lin, X.W.; Maltez, Rogério Luis (1996) [Artigo de periódico]
      Ion-beam-induced epitaxial crystallization (IBIEC) of Fe-implanted Si(OO1) was studied by transmission electron microscopy and Rutherford backscattering spectrometry. For sufficiently high Fe doses, it was found that IBIEC ...