Ion beam synthesis of cubic FeSi2

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Data
1993
Autor
Tipo
URI
http://hdl.handle.net/10183/140585
Assunto
Abstract
Cubic FeSi, precipitates were synthesized in Si ( 100) by room-temperature Fe ion implantation followed by Si 500 keV ion beam induced epitaxial crystallization at 320 “C!. High resolution electron microscopy and Rutherford backscattering/channeling techniques show that the cubic precipitates occur in both aligned (A) and twinned (B) types with a lattice parameter very similar to that of the Si (100) matrix.
Contido em
Applied physics letters. New York. Vol. 62, no. 3 (Jan. 1993), p. 306-308
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Estrangeiro
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