Listar Ciencias Exactas y Naturales por tema "Implantação de íons"
Mostrando ítems 21-40 de 68
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Impact-parameter dependence of the electronic energy loss of fast ions
(1998) [Artículo de periódico]In this work we describe a model for the electronic energy loss of bare ions at high velocities. Starting from first-order perturbation theory we propose a simple formula to calculate the impact-parameter dependence of the ... -
Implanted boron depth profiles in the az111 photoresist
(1988) [Artículo de periódico]The isotope 1OB has been implanted into the photoresist AZll1 in the 30–150 keV energy range. The corresponding depth profiles have been analyzed using the 1OB(n,a) 7 Li reaction. At 60 keV, the profile changes from a ... -
Improved calculations of the electronic and nuclear energy loss for light ions penetrating H and he targets at intermediate velocities
(1994) [Artículo de periódico]A review is given on the use of the coupled-channel method to calculate the electronic and niuclear energy loss of ions penetrating the matter. This first principie calculation based on an expansion of the time dependent ... -
Impurity resistivity of the double-donor system Si:P,Bi
(1999) [Artículo de periódico]The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities ... -
Influence of nuclear track potentials in insulators on the emission of target auger electrons
(1992) [Artículo de periódico]The angle, energy, and fluence dependence of electron emission following the interaction of normally incident 100-MeV Ne⁹⁺ ions with thin polypropylene foils and 170-MeV Ne⁷⁺ projectiles with Mylar foils has been investigated ... -
Influence of the implantation and annealing parameters on the photoluminescence produced by Si hot implantation
(2007) [Artículo de periódico] -
Intermetallic phases formed during tin implantation into iron and steels
(1984) [Artículo de periódico]The surface layers of pure iron, high-carbon steel and stainless steel, ion implanted with 1 X 1017 Sn+ cm-² , have been characterized by means of 119Sn conversion electrons Mossbauer scattering. The intermetallic phases ... -
Ion beam synthesis of cubic FeSi2
(1993) [Artículo de periódico]Cubic FeSi, precipitates were synthesized in Si ( 100) by room-temperature Fe ion implantation followed by Si 500 keV ion beam induced epitaxial crystallization at 320 “C!. High resolution electron microscopy and Rutherford ... -
Ion radiation induced diffusion of xe implanted into a polymer film
(1992) [Artículo de periódico]In the present work, we have studied the most important parameters which can influence the radiation induced diffusion mechanism of Xe ions implanted into a photoresist film. With this aim, we have Ar post-bombarded the ... -
Iron nitride and carbonitride phases in a nitrogen implanted carbon steel
(1982) [Artículo de periódico]Iron nitride and carbonitride phases formed during nitrogen implantation and subsequent thermal annealing of a medium-carbon steel are investigated by means of conversion electron Mossbauer scattering. The results are ... -
Isotopic substitution of N, O, and Si in the thermal oxidation of nitrogen-deposited silicon
(1999) [Artículo de periódico]Nitrogen was deposited on the surface of Si~100! wafers by ion implantation at a very low energy (approximately 20 eV), at fluences between 1 and 1031014 cm22. The samples were thermally oxidized in dry O2 at temperatures ... -
Low-temperature ion-induced epitaxial growth of alfa-FeSi2 and cubic FeSi2 in Si
(1993) [Artículo de periódico]Ion-beam-induced epitaxial crystallization of amorphous Si implanted with Fe to 18 at. % peak concentration was studied. The structure of the specimen was characterized using transmission electron microscopy and Rutherford ... -
Low-temperature iron-nitride phase transformations induced by ion bombardment
(1996) [Artículo de periódico]We show that for the Fe–N system the combined use of ion irradiation and thermal annealing can lower the temperature for a given phase transformation. By Ar bombarding N-implanted Fe samples at 250 and 300 °C, we have ... -
Magnetoresistance in rf-sputtered(nife/cu/co/cu) spin-valve multilayers
(1993) [Artículo de periódico]A study of the vtiation of the magnetoresistancein (Ni80Fe20/Cu/Co/Cu) multilayers with the thicknesses tNiFe, tcO, and &;cu of each type of component layer has been performed. The magnetoresistance (MR), which at 4 .2 K ... -
Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
(1993) [Artículo de periódico]A pronounced enhancement in the electrical activation of implanted Si in GaAs is demonstrated by co-implantation of Al. The maximum enhancement ( x 2) occurs when the Si distribution is shallow, there is a separation between ... -
Metastable acceptor centers in boron implanted silicon
(1995) [Artículo de periódico]The evolution of the electrical activation with the annealing time in B1 implanted (5.0 31014 cm22, 50 keV! Si was studied as a function of the annealing temperature. Electrical activation yields of 15%–30% were observed ... -
Mossbauer study of hydrogenated amorphous germanium-tin thin-film alloys
(1989) [Artículo de periódico]This work reports on the structure of defects around Sn atoms in amorphous germanium-tin alloys deposited by the rf sputtering of compound targets, The influence of atomic hydrogen on the structure of such defects is ... -
Nitrogen implantation into amorphous carbon films: sims and positron annihilation analyses
(1996) [Artículo de periódico]Hard amorphous hydrogenated carbon films deposited by self-bias glow discharge were implanted at room temperature with 70 keV-nitrogen ions at fluences between 2.0 and 9.0 x 10 16 N/cm2. The implantation energy was chosen ... -
Nonperturbative stopping-power calculation for bare and neutral hydrogen incident on he
(1993) [Artículo de periódico]The electronic stopping power of hydrogen beams penetrating He gas has been calculated by solving the time-dependent Schrõdinger equation. Special attention has been given to low incident energies where capture and loss ... -
On the behavior of deuterium in ultrathin SiO2 films upon thermal annealing
(1998) [Artículo de periódico]Following the observation of the large isotopic effect in D2 passivated gate dielectrics @J. Lyding, K. Hess, and I. C. Kizilyalli, Appl. Phys. Lett. 68, 2526 ~1996!#, we studied the behavior of deuterium in ultrathin SiO2 ...