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Carrier dynamics in stacked InP/GaAs quantum dots

dc.contributor.authorVeloso, A.B.pt_BR
dc.contributor.authorNakaema, Marcelo Kiyoshi Kianpt_BR
dc.contributor.authorGodoy, Marcio P.F. dept_BR
dc.contributor.authorLopes, João Marcelo Jordãopt_BR
dc.contributor.authorLikawa, Fernandopt_BR
dc.contributor.authorBrasil, Maria José Santos Pompeupt_BR
dc.contributor.authorBortoleto, José Roberto Ribeiropt_BR
dc.contributor.authorCotta, Mônica Alonsopt_BR
dc.contributor.authorFichtner, Paulo Fernando Papaleopt_BR
dc.contributor.authorMörschbächer, Marcio Josépt_BR
dc.contributor.authorMadureira, J.R.pt_BR
dc.date.accessioned2016-05-24T02:10:51Zpt_BR
dc.date.issued2007pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141716pt_BR
dc.description.abstractWe investigated two stacked layers of InP/GaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP quantum dots formed in two quantum dot layers are more uniform than those from a single layer structure. The thermal activation energies as well as the photoluminescence decays are rather independent of the separation between quantum dot layers and the presence of the second layer. The quantum dot optical emission persists for thermal activation energy larger than the calculated exciton binding energy. The photoluminescence decay is relatively fast for type-II alignment.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Vol. 91, no. 12 (Sept. 2007), 121917, 3 p.pt_BR
dc.rightsOpen Accessen
dc.subjectArseneto de galiopt_BR
dc.subjectFosfeto de índiopt_BR
dc.subjectPontos quânticospt_BR
dc.subjectEspectrometria de emissão ópticapt_BR
dc.titleCarrier dynamics in stacked InP/GaAs quantum dotspt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000616855pt_BR
dc.type.originEstrangeiropt_BR


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