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Carrier dynamics in stacked InP/GaAs quantum dots
dc.contributor.author | Veloso, A.B. | pt_BR |
dc.contributor.author | Nakaema, Marcelo Kiyoshi Kian | pt_BR |
dc.contributor.author | Godoy, Marcio P.F. de | pt_BR |
dc.contributor.author | Lopes, João Marcelo Jordão | pt_BR |
dc.contributor.author | Likawa, Fernando | pt_BR |
dc.contributor.author | Brasil, Maria José Santos Pompeu | pt_BR |
dc.contributor.author | Bortoleto, José Roberto Ribeiro | pt_BR |
dc.contributor.author | Cotta, Mônica Alonso | pt_BR |
dc.contributor.author | Fichtner, Paulo Fernando Papaleo | pt_BR |
dc.contributor.author | Mörschbächer, Marcio José | pt_BR |
dc.contributor.author | Madureira, J.R. | pt_BR |
dc.date.accessioned | 2016-05-24T02:10:51Z | pt_BR |
dc.date.issued | 2007 | pt_BR |
dc.identifier.issn | 0003-6951 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/141716 | pt_BR |
dc.description.abstract | We investigated two stacked layers of InP/GaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP quantum dots formed in two quantum dot layers are more uniform than those from a single layer structure. The thermal activation energies as well as the photoluminescence decays are rather independent of the separation between quantum dot layers and the presence of the second layer. The quantum dot optical emission persists for thermal activation energy larger than the calculated exciton binding energy. The photoluminescence decay is relatively fast for type-II alignment. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Applied physics letters. Vol. 91, no. 12 (Sept. 2007), 121917, 3 p. | pt_BR |
dc.rights | Open Access | en |
dc.subject | Arseneto de galio | pt_BR |
dc.subject | Fosfeto de índio | pt_BR |
dc.subject | Pontos quânticos | pt_BR |
dc.subject | Espectrometria de emissão óptica | pt_BR |
dc.title | Carrier dynamics in stacked InP/GaAs quantum dots | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000616855 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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