High-resolution depth profiling in ultrathin Al/sub 2/O/sub 3/ films on Si
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2000Autor
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Abstract
A combination of two complementary depth profiling techniques with sub-nm depth resolution, nuclear resonance profiling and medium energy ion scattering, and cross-sectional high-resolution transmission electron microscopy were used to study compositional and microstructural aspects of ultrathin (sub-10 nm) Al2O3 films on silicon. All three techniques demonstrate uniform continuous films of stoichiometric Al2O3 with abrupt interfaces. These film properties lead to the ability of making metal-ox ...
A combination of two complementary depth profiling techniques with sub-nm depth resolution, nuclear resonance profiling and medium energy ion scattering, and cross-sectional high-resolution transmission electron microscopy were used to study compositional and microstructural aspects of ultrathin (sub-10 nm) Al2O3 films on silicon. All three techniques demonstrate uniform continuous films of stoichiometric Al2O3 with abrupt interfaces. These film properties lead to the ability of making metal-oxide semiconductor devices with Al2O3 gate dielectric with equivalent electrical thickness in the sub-2 nm range. ...
Contido em
Applied physics letters. Melville. Vol. 76, no. 2 (Jan. 2000), p. 176-178
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Estrangeiro
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Artigos de Periódicos (39334)Ciências Exatas e da Terra (5974)
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