Enhanced damage accumulation in carbon implanted silicon

dc.contributor.author	Souza, Joel Pereira de	pt_BR
dc.contributor.author	Boudinov, Henri Ivanov	pt_BR
dc.contributor.author	Fichtner, Paulo Fernando Papaleo	pt_BR
dc.date.accessioned	2016-05-11T02:10:07Z	pt_BR
dc.date.issued	1994	pt_BR
dc.identifier.issn	0003-6951	pt_BR
dc.identifier.uri	http://hdl.handle.net/10183/140693	pt_BR
dc.description.abstract	The accumulation of damage in Si implanted with 12C+ was investigated experimentally using aligned Rutherford backscattering analysis. The damage protiles in Si implanted with 12C+ or 11B+ at 50 keV to the same doses and dose rate were compared. It was found that the damage accumulates at a noticeably higher rate by 12C+ implantation than by 11B+, especially for doses >2X 1Or5 cmm2. In order to explain our results we suggest that self-interstitial Si atoms are captured by the implanted C atoms, forming complex defects which are stable at room temperature.	en
dc.format.mimetype	application/pdf	pt_BR
dc.language.iso	eng	pt_BR
dc.relation.ispartof	Applied physics letters. New York. Vol. 64, no. 26 (June 1994), p. 3596-3597	pt_BR
dc.rights	Open Access	en
dc.subject	Física da matéria condensada	pt_BR
dc.subject	Implantação de íons	pt_BR
dc.subject	Retroespalhamento rutherford	pt_BR
dc.title	Enhanced damage accumulation in carbon implanted silicon	pt_BR
dc.type	Artigo de periódico	pt_BR
dc.identifier.nrb	000220495	pt_BR
dc.type.origin	Estrangeiro	pt_BR

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