Ion beam synthesis of cubic FeSi2
dc.contributor.author | Desimoni, Judith | pt_BR |
dc.contributor.author | Bernas, H. | pt_BR |
dc.contributor.author | Behar, Moni | pt_BR |
dc.contributor.author | Lin, X.W. | pt_BR |
dc.contributor.author | Washburn, J. | pt_BR |
dc.contributor.author | Liliental-Weber, Zuzanna | pt_BR |
dc.date.accessioned | 2016-05-10T02:06:59Z | pt_BR |
dc.date.issued | 1993 | pt_BR |
dc.identifier.issn | 0003-6951 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/140585 | pt_BR |
dc.description.abstract | Cubic FeSi, precipitates were synthesized in Si ( 100) by room-temperature Fe ion implantation followed by Si 500 keV ion beam induced epitaxial crystallization at 320 “C!. High resolution electron microscopy and Rutherford backscattering/channeling techniques show that the cubic precipitates occur in both aligned (A) and twinned (B) types with a lattice parameter very similar to that of the Si (100) matrix. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Applied physics letters. New York. Vol. 62, no. 3 (Jan. 1993), p. 306-308 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Física da matéria condensada | pt_BR |
dc.subject | Implantação de íons | pt_BR |
dc.title | Ion beam synthesis of cubic FeSi2 | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000056178 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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