Atomic transport across the interfaces during the formation of ultrathin silicon oxide/nitride/oxide films
View/ Open
Date
1998Author
Type
Subject
Abstract
The redistribution of O and N during the final, thermal oxidation in dry O2 step in the formation of ultrathin silicon oxide/nitride/oxide dielectric films ~ONO! was investigated using isotopic tracing and depth profiling with nanometer resolution. The results show that the final oxidation step induces atomic transport of O and N species in the system, such that the formed ONO structures are not stacked layer structures, but rather a silicon oxynitride ultrathin film, having moderate concentrat ...
The redistribution of O and N during the final, thermal oxidation in dry O2 step in the formation of ultrathin silicon oxide/nitride/oxide dielectric films ~ONO! was investigated using isotopic tracing and depth profiling with nanometer resolution. The results show that the final oxidation step induces atomic transport of O and N species in the system, such that the formed ONO structures are not stacked layer structures, but rather a silicon oxynitride ultrathin film, having moderate concentrations of N in the near-surface and near-interface regions, and a high N concentration in the bulk. ...
In
Applied physics letters. New York. Vol. 73, no. 14 (Oct. 1998), p. 1970-1972
Source
Foreign
Collections
-
Journal Articles (39774)Exact and Earth Sciences (6068)
This item is licensed under a Creative Commons License