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dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.contributor.authorSalgado, Tania Denise Miskinispt_BR
dc.contributor.authorRadtke, Claudiopt_BR
dc.contributor.authorKrug, Cristianopt_BR
dc.contributor.authorAndrade, Jones dept_BR
dc.date.accessioned2016-05-10T02:06:54Zpt_BR
dc.date.issued1998pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/140566pt_BR
dc.description.abstractThe redistribution of O and N during the final, thermal oxidation in dry O2 step in the formation of ultrathin silicon oxide/nitride/oxide dielectric films ~ONO! was investigated using isotopic tracing and depth profiling with nanometer resolution. The results show that the final oxidation step induces atomic transport of O and N species in the system, such that the formed ONO structures are not stacked layer structures, but rather a silicon oxynitride ultrathin film, having moderate concentrations of N in the near-surface and near-interface regions, and a high N concentration in the bulk.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. New York. Vol. 73, no. 14 (Oct. 1998), p. 1970-1972pt_BR
dc.rightsOpen Accessen
dc.subjectImplantação de íonspt_BR
dc.subjectFilmes finos dieletricospt_BR
dc.subjectNitrogêniopt_BR
dc.subjectOxigêniopt_BR
dc.subjectOxidaçãopt_BR
dc.subjectDeposição de vapor químicopt_BR
dc.subjectOxinitreto de siliciopt_BR
dc.titleAtomic transport across the interfaces during the formation of ultrathin silicon oxide/nitride/oxide filmspt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000124320pt_BR
dc.type.originEstrangeiropt_BR


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