Lattice site investigation of F in preamorphized Si
Visualizar/abrir
Data
2007Tipo
Abstract
The lattice location of F atoms in Si was experimentally studied. Si single crystals were amorphized, implanted with F, and afterwards the amorphous layer was recrystallized. Some of the samples prepared in this way were also annealed at 750 °C for 60 min. The 19F (p, α ƴ)16 resonant nuclear reaction at 340.5 keV was employed to measure the probability of a close encounter between protons and F nuclei as a function of the incident angle with respect to six major crystalline directions. The pred ...
The lattice location of F atoms in Si was experimentally studied. Si single crystals were amorphized, implanted with F, and afterwards the amorphous layer was recrystallized. Some of the samples prepared in this way were also annealed at 750 °C for 60 min. The 19F (p, α ƴ)16 resonant nuclear reaction at 340.5 keV was employed to measure the probability of a close encounter between protons and F nuclei as a function of the incident angle with respect to six major crystalline directions. The predictions of several ab initio calculations proved to be incompatible with the present experimental findings. ...
Contido em
Physical review. B, Condensed matter and materials physics. Woodbury. Vol. 76, no. 3 (July 2007), 033201 3p.
Origem
Estrangeiro
Coleções
-
Artigos de Periódicos (39558)Ciências Exatas e da Terra (6036)
Este item está licenciado na Creative Commons License