Browsing by Author "Lopes, João Marcelo Jordão"
Now showing items 1-12 of 12
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Carrier dynamics in stacked InP/GaAs quantum dots
(2007) [Journal article]We investigated two stacked layers of InP/GaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP quantum dots formed in two quantum dot layers are more uniform ... -
Cluster coarsening and luminescence emission intensity of Ge nanoclusters in SiO/sub 2/ layers
(2003) [Journal article]SiO2 layers 180 nm thick are implanted with 120 keV Ge+ ions at a fluence of 1.2x1016 cm-². The distribution and coarsening evolution of Ge nanoclusters are characterized by Rutherford backscattering spectrometry and ... -
Effect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO/sub 2/ layers
(2005) [Journal article]Sn nanoclusters are synthesized in 180 nm SiO2 layers after ion implantation and heat treatment. Annealings in N2 ambient at high temperatures sTù700 °Cd lead to the formation of Sn nanoclusters of different sizes in ... -
Estudo de retroespalhamento Rutherford em camadas de SiO/sub 2/ implantados com Ge e Si
(2004) [Abstract published in event] -
Formation of epitaxial [Beta]-Sn islands at the interface of SiO/sub 2/Si layers implanted with Sn ions
(2005) [Journal article]180 nm SiO2 layers on Si s100d were implanted with Sn ions producing a profile with a peak concentration of 3 at. % at the middle of the oxide. After high temperature s900–1100 °Cd annealing, an array of b-Sn islands ... -
Fotoluminescência em camadas de SiO/sub 2/ implantados com Ge
(2002) [Abstract published in event] -
Growth of boron-doped few-layer graphene by molecular beam epitaxy
(2018) [Journal article]We investigated the growth of boron-doped few-layer graphene on a-Al2O3 (0001) substrates by molecular beam epitaxy using two different growth approaches: one where boron was provided during the entire graphene synthesis ... -
Low temperature aging effects on the formation of Sn nanoclusters in SiO/sub 2/Si films and interfaces
(2007) [Journal article]The formation of Sn nanocrystals NCs in ion implanted SiO2 /Si films is investigated using Rutherford backscattering spectrometry and transmission electron microscopy. Low temperature and long time aging treatments followed ... -
Medidas de retroespalhamento de Rutherford em filmes de SiO/sub 2/ implantados com íons de Ge e Sn
(2003) [Abstract published in event] -
Nanoestruturas luminescentes de Ge e Sn em camadas de SiO/sub 2/ implantadas com íons
(2005) [Thesis]Neste trabalho estudam-se as propriedades de nanoestruturas de Ge e Sn formadas em amostras de SiO2/Si(100) através dos processos de implantação iônica e tratamento térmico. A formação de nanocristais de Ge foi investigada ... -
Propriedades nanomecânicas de filmes C/sub 60/ irradiados com N+
(1999) [Abstract published in event] -
Structural and optical properties of InP quantum dots grown on GaAs(001)
(2007) [Journal article]We investigated structural and optical properties of type-II InP/GaAs quantum dots using reflection high energy electron diffraction, transmission electron microscopy, atomic force microscopy, grazing incidence x-ray ...
