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dc.contributor.authorVos, Maartenpt_BR
dc.contributor.authorGrande, Pedro Luispt_BR
dc.contributor.authorNandi, Sanjoy K.pt_BR
dc.contributor.authorVenkatachalam, Dinesh K.pt_BR
dc.contributor.authorElliman, R. G.pt_BR
dc.date.accessioned2014-06-13T02:07:45Zpt_BR
dc.date.issued2013pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/96576pt_BR
dc.description.abstractHigh-energy electron scattering is used to investigate Ta films implanted with 10 keV O ions. These films are of interest as they have been used for the fabrication of memristors. High-energy electron scattering is used with incoming electron energies ranging from 5 to 40 keV. The inelastic mean free path, and hence the probing depth, is at these energies of the same order as the range of the implanted ions. At the same time, we can distinguish the mass of the atom that scattered the electron elastically, due to the dependence of the recoil energy on the mass of the scatterer. This allows us to determine quantitatively the atomic composition near the surface from the signal of electrons that have scattered elastically but not inelastically. Electrons that have scattered inelastically as well as elastically provide us with information on the possible electronic excitations. Their signal is used to monitor the presence of the Ta2O5 phase near the surface (characterised by a significant band gap of ~-4:5 eV), and estimate at what depth below the surface pure Ta metal is present. In this way, we obtain a fairly detailed picture of the elemental composition and electronic properties of these films.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofJournal of applied physics. New York. Vol. 114, no. 7 (Aug. 2013), 073508, 4 p.pt_BR
dc.rightsOpen Accessen
dc.subjectImplantacao ionicapt_BR
dc.subjectFilmes finos metalicospt_BR
dc.subjectIntervalo proibido de energiapt_BR
dc.subjectTantalopt_BR
dc.subjectOxigêniopt_BR
dc.titleA high-energy electron scattering study of the electronic structure and elemental composition of O-implanted Ta films used for the fabrication of memristor devicespt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000903498pt_BR
dc.type.originEstrangeiropt_BR


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