Ion irradiation effects on the exchange bias in IrMn/Co films

Abstract

The present work reports on the influence of ion irradiation in exchange-coupled bilayers. Magnetron-sputtered IrMn4 /Co films were irradiated with 40 keV He+ ions and the dependence of their magnetic properties was studied as function of ion fluence and current used during the irradiations. The effects of ion damage and electronic excitation were also studied through additional irradiations with H+ and Ne+ ions. The results show a clear dependence of the exchange-bias field on the defects caused by the ion bombardment. No correlations with other irradiation effects were observed.