Electroluminescence induced by Ge nanocrystals obtained by hot ion implantation into SiO2
dc.contributor.author | Bregolin, Felipe Lipp | pt_BR |
dc.contributor.author | Behar, Moni | pt_BR |
dc.contributor.author | Sias, Uilson Schwantz | pt_BR |
dc.contributor.author | Reboh, Shay | pt_BR |
dc.contributor.author | Lehmann, Jan | pt_BR |
dc.contributor.author | Rebohle, Lars | pt_BR |
dc.contributor.author | Skorupa, Wolfgang | pt_BR |
dc.date.accessioned | 2014-06-06T02:06:38Z | pt_BR |
dc.date.issued | 2009 | pt_BR |
dc.identifier.issn | 0021-8979 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/96129 | pt_BR |
dc.description.abstract | Commonly, electroluminescence (EL) from Ge nanocrystals (Ge NCs) has been obtained by room temperature (RT) Ge implantation into a SiO2 matrix followed by a high temperature anneal. In the present work, we have used a novel experimental approach: we have performed the Ge implantation at high temperature (Ti) and subsequently a high temperature anneal at 900 °C in order to grow the Ge NCs. By performing the implantation at Ti=350 °C, the electrical stability of the MOSLEDs were enhanced, as compared to the ones obtained from RT implantation. Moreover, by changing the implantation fluence from Φ=0.5x1016 and 1.0x1016 Ge/cm² we have observed a blueshift in the EL emission peak. The results show that the electrical stability of the hot implanted devices is higher than the ones obtained by RT implantation. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Journal of applied physics. Melville. Vol. 106, no. 10 (Nov. 2009), 106103, 3 p. | pt_BR |
dc.rights | Open Access | en |
dc.subject | Materiais nanoestruturados | pt_BR |
dc.subject | Eletroluminescência | pt_BR |
dc.subject | Semicondutores elementares | pt_BR |
dc.subject | Implantacao ionica | pt_BR |
dc.subject | Dispositivos mis | pt_BR |
dc.subject | Deslocamento de linha espectral | pt_BR |
dc.subject | Compostos de silício | pt_BR |
dc.subject | Germânio | pt_BR |
dc.title | Electroluminescence induced by Ge nanocrystals obtained by hot ion implantation into SiO2 | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000731445 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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